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OneNAND lock scheme depends on density and process of chip.
Some OneNAND chips support all block unlock
Signed-off-by: Kyungmin Park <kyungmin.park@samsung.com>
Signed-off-by: David Woodhouse <dwmw2@infradead.org>
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Fix some kernel-doc typos/spellos.
Use kernel-doc syntax in places where it was almost used.
Correct/add struct, struct field, and function param names where needed.
Signed-off-by: Randy Dunlap <rdunlap@xenotime.net>
Signed-off-by: David Woodhouse <dwmw2@infradead.org>
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The nand_oobinfo structure is not fitting the newer error correction
demands anymore. Replace it by struct nand_ecclayout and fixup the users
all over the place. Keep the nand_oobinfo based ioctl for user space
compability reasons.
Signed-off-by: Thomas Gleixner <tglx@linutronix.de>
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One Block of the NAND Flash Array memory is reserved as
a One-Time Programmable Block memory area.
Also, 1st Block of NAND Flash Array can be used as OTP.
The OTP block can be read, programmed and locked using the same
operations as any other NAND Flash Array memory block.
OTP block cannot be erased.
OTP block is fully-guaranteed to be a valid block.
Signed-off-by: Kyungmin Park <kyungmin.park@samsung.com>
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Signed-off-by: Kyungmin Park <kyungmin.park@samsung.com>
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Signed-off-by: Linus Torvalds <torvalds@osdl.org>
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This (and the three subsequent patches) is working well on OMAP H4 with
2.6.15-rc4 kernel and passes the LTP fs test.
Signed-off-by: Linus Torvalds <torvalds@osdl.org>
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Signed-off-by: Thomas Gleixner <tglx@linutronix.de>
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Add density mask for better support of DDP chips.
Signed-off-by: Kyungmin Park <kyungmin.park@samsung.com>
Signed-off-by: Thomas Gleixner <tglx@linutronix.de>
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Add suspend/resume
Signed-off-by: Kyungmin Park <kyungmin.park@samsung.com>
Signed-off-by: Thomas Gleixner <tglx@linutronix.de>
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- Remove unused block, page parameters
- Add constant instead of runtime value
Signed-off-by: Kyungmin Park <kyungmin.park@samsung.com>
Signed-off-by: Thomas Gleixner <tglx@linutronix.de>
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- Update OMAP OneNAND mapping file using device driver model
- Remove board specific macro and values.
Signed-off-by: Kyungmin Park <kyungmin.park@samsung.com>
Signed-off-by: Thomas Gleixner <tglx@linutronix.de>
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Based on NAND memory bad block table code
Signed-off-by: Kyungmin Park <kyungmin.park@samsung.com>
Signed-off-by: Thomas Gleixner <tglx@linutronix.de>
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Add OneNAND Sync. Burst Read support
Tested with OMAP platform
Signed-off-by: Kyungmin Park <kyungmin.park@samsung.com>
Signed-off-by: Thomas Gleixner <tglx@linutronix.de>
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OneNAND is a new flash technology from Samsung with integrated SRAM
buffers and logic interface.
Signed-off-by: Kyungmin Park <kyungmin.park@samsung.com>
Signed-off-by: Thomas Gleixner <tglx@linutronix.de>
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