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authorKyungmin Park <kyungmin.park@samsung.com>2006-12-22 16:21:54 +0900
committerArtem Bityutskiy <dedekind@infradead.org>2007-01-10 14:35:00 +0200
commit60d84f9739a47d0ed8e19805d9056e39fba31c79 (patch)
tree8a93ba3f6de707446e191328f7190f7669d3619c /include
parentf62724873652ddb19edf7f92843e9456fe3be3ea (diff)
[MTD] OneNAND: add subpage write support
OneNAND supports up to 4 writes at one NAND page. Add support of this feature. Signed-off-by: Kyungmin Park <kyungmin.park@samsung.com>
Diffstat (limited to 'include')
-rw-r--r--include/linux/mtd/onenand.h2
1 files changed, 2 insertions, 0 deletions
diff --git a/include/linux/mtd/onenand.h b/include/linux/mtd/onenand.h
index 62ca0f42982..fe3500d7d4b 100644
--- a/include/linux/mtd/onenand.h
+++ b/include/linux/mtd/onenand.h
@@ -88,6 +88,7 @@ struct onenand_bufferram {
* operation is in progress
* @state: [INTERN] the current state of the OneNAND device
* @page_buf: data buffer
+ * @subpagesize: [INTERN] holds the subpagesize
* @ecclayout: [REPLACEABLE] the default ecc placement scheme
* @bbm: [REPLACEABLE] pointer to Bad Block Management
* @priv: [OPTIONAL] pointer to private chip date
@@ -128,6 +129,7 @@ struct onenand_chip {
onenand_state_t state;
unsigned char *page_buf;
+ int subpagesize;
struct nand_ecclayout *ecclayout;
void *bbm;